DocumentCode
1560942
Title
An approach for the higher efficiency in the HIT cells
Author
Taguchi, Mikio ; Sakata, Hitoshi ; Yoshimine, Yukihiro ; Maruyama, Eiji ; Terakawa, Akita ; Tanaka, Makoto ; Kiyama, Seiichi
Author_Institution
Technol. R&D Headquarters, Sanyo Electr. Co. Ltd., Osaka, Japan
fYear
2005
Firstpage
866
Lastpage
871
Abstract
The highest conversion efficiency to date of 21.5% (confirmed by AIST) with a size of 100.3 cm2 has been achieved in an HIT cell. Because of this high efficiency and the cell´s superior temperature characteristics, HIT cells are highly regarded by consumers. Sanyo will increase the production volume of cells and modules to meet the demand both inside and outside of Japan. We have been investigating suitable materials based on Sanyo´s technology for fabricating high-quality a-Si solar cells to obtain higher build-in potential and control the junction properties, and have been studying how to treat the surface to create a good interface without introducing any damage. We will continue our efforts to obtain even higher levels of conversion efficiency by using the high potential that this structure has.
Keywords
amorphous semiconductors; elemental semiconductors; semiconductor device manufacture; silicon; solar cells; 21.5 percent; HIT cells; Si; build-in potential; cell temperature characteristics; conversion efficiency; junction properties; solar cells; Amorphous silicon; Electrodes; Fingers; Laboratories; Mass production; P-n junctions; Photovoltaic cells; Plasma temperature; Substrates; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488270
Filename
1488270
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