Title :
Ultra high-rate ETP deposited silicon nitride for >15% in-line processed multicrystalline silicon solar cells
Author :
van Erven, A.J.M. ; Bosch, R.C.M. ; Toelle, R. ; Voight, O. ; Petri, S. ; Bijker, M.D.
Author_Institution :
OTB Solar, Eindhoven, Netherlands
Abstract :
The DEPx, developed by OTB Solar, uses the ETP technique for the deposition of a silicon nitride ARC on silicon solar cells. With this technique very high deposition rates can be achieved and experiments were carried out with Shell Solar to investigate the quality of these ultra high-rate deposited silicon nitride layers. An optimization study which focused on mass density and thermal stability showed that mc-Si solar cell efficiencies of >15% can be reached with silicon nitride grown at >5 nm/s.
Keywords :
antireflection coatings; elemental semiconductors; plasma deposited coatings; silicon; silicon compounds; solar cells; thermal stability; ETP deposited silicon nitride; Si; SiNx; deposition rates; in-line processed mulitcrystalline silicon solar cells; mass density; optimization study; solar cell efficiencies; thermal stability; Hydrogen; Passivation; Photovoltaic cells; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Silicon; Thermal stability;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488288