Title :
Effective interfaces in silicon heterojunction solar cells
Author :
Wang, T.H. ; Iwaniczko, E. ; Page, M.R. ; Levi, D.H. ; Yan, Y. ; Yelundur, V. ; Branz, H.M. ; Rohatgi, A. ; Wang, Q.
Author_Institution :
Nat. Renewable Energy Lab., USA
Abstract :
Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are investigated for use in silicon heterojunction (SHJ) solar cells on p-type crystalline silicon wafers. A requirement for excellent emitter quality is minimization of interface recombination. Best results necessitate immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate. We obtain a record planar HJ efficiency of 16.9% with a high Voc of 652 mV on p-type float-zone (FZ) silicon substrates with HWCVD a-Si:H(n) emitters and screen-printed Al-BSF contacts. H pretreatment by HWCVD is beneficial when limited to a very short period prior to emitter deposition.
Keywords :
amorphous semiconductors; chemical vapour deposition; elemental semiconductors; hydrogenation; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; 16.9 percent; 652 mV; Si; emitter deposition; hot-wire chemical vapor deposition; interface recombination; p-type crystalline silicon wafers; p-type float-zone silicon substrates; screen-printed Al-BSF contacts; silicon heterojunction solar cells; thin hydrogenated amorphous silicon; Amorphous silicon; Chemical technology; Chemical vapor deposition; Epitaxial growth; Heterojunctions; Laboratories; Passivation; Photovoltaic cells; Renewable energy resources; Spontaneous emission;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488290
