Title :
Implentation of a homogeneous high-sheet-resistance emitter in multicrystalline silicon solar cells
Author :
Yelundur, Vijay ; Nakayashiki, Kenta ; Hilali, Mohamed ; Rohatgi, Ajeet
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Solar cell efficiency enhancement resulting from the implementation of a high-sheet-resistance emitter (95 Ω/sq.) in multicrystalline silicon solar cells with screen-printed contacts is demonstrated in this paper. Solar cells on low-cost string ribbon Si from Evergreen Solar, Baysix mc-Si from Deutsche Solar, and high-quality float zone silicon with 45 Ω/sq. and 95 Ω/sq. phosphorus-doped n+-emitters are fabricated with RTP-fired screen-printed contacts and characterized to asses the impact of a high-emitter-sheet resistance emitter on cell performance. Screen-printed mc-Si solar cells show an improvement in Voc of 4-5 mV in most cases that is attributed to the use of the high-sheet-resistance emitter. An appreciable increase in Jsc by as much as 1.0 mA/cm2 is also observed due to enhanced blue response identified by internal quantum efficiency measurement.
Keywords :
carrier lifetime; electrical resistivity; elemental semiconductors; firing (materials); phosphorus; silicon; solar cells; 4 to 5 mV; RTP-fired screen-printed contacts; Si; float zone silicon; high-sheet-resistance emitter; internal quantum efficiency measurement; multicrystalline silicon solar cells; phosphorus-doped n+-emitters; screen-printed contacts; string ribbon; Contact resistance; Degradation; Doping; Electrical resistance measurement; Firing; Metallization; Photovoltaic cells; Radiative recombination; Silicon; Surface resistance;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488291
