Title :
Fitting considerations of polynomial device models [semiconductor device modeling]
Author :
Rahkonen, Timo ; Heiskanen, Antti
Author_Institution :
Dept. of Electr. & Inf. Eng., Oulu Univ., Finland
Abstract :
In this paper, the fitting and usefulness of polynomial device models are discussed. It is shown that a polynomial model can provide an accurate AC fit of device nonlinearities and hence give accurate results in distortion simulations up to 35 dBc IM3 levels. Moreover, polynomial modeling is applicable in Volterra analysis, which allows the visualization of the fine structure of the distortion. The effects of the fitting range are also discussed.
Keywords :
Volterra equations; curve fitting; least mean squares methods; nonlinear distortion; polynomial approximation; semiconductor device models; IM3; LMSE polynomial curve-fitting; Volterra analysis; device nonlinearities AC fit; distortion fine structure visualization; distortion simulations; fitting range effects; polynomial device models; semiconductor device modeling; Capacitance measurement; Charge measurement; Current measurement; Laboratories; Mathematical model; Polynomials; Temperature control; Temperature measurement; Visualization; Voltage control;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1206149
