DocumentCode :
1561168
Title :
Analytical model for the optimization of locally contacted solar cells
Author :
Plagwitz, Heiko ; Schaper, Martin ; Schmidt, Jan ; Terheiden, Barbara ; Brendel, Rolf
Author_Institution :
Inst. fur Solarenergieforschung GmbH, Emmerthal, Germany
fYear :
2005
Firstpage :
999
Lastpage :
1002
Abstract :
An empiric analytical model is presented that describes both, the diode saturation current j0 and the dark series resistance Rs of the passivated and locally contacted rear side of solar cells. The model is experimentally verified for both, point and stripe contacts. Metallization fractions from 1.0% to 50% are realized in the experiments. The measured values of j0 and Rs fit the theory within the error of the measurement. We use the modelled j0 and Rs in a one-dimensional simulation of the solar cell performance, to optimize the rear contact geometry for maximum efficiency.
Keywords :
dark conductivity; electrical resistivity; elemental semiconductors; passivation; point contacts; semiconductor device metallisation; silicon; solar cells; Si; dark series resistance; diode saturation current; empiric analytical model; locally contacted solar cells; metallization; passivation; point contacts; rear contact geometry; stripe contacts; Analytical models; Contact resistance; Diodes; Electrical resistance measurement; Equations; Geometry; Metallization; Passivation; Photovoltaic cells; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488301
Filename :
1488301
Link To Document :
بازگشت