Analytical model for the optimization of locally contacted solar cells

Author

Plagwitz, Heiko ; Schaper, Martin ; Schmidt, Jan ; Terheiden, Barbara ; Brendel, Rolf

Author_Institution

Inst. fur Solarenergieforschung GmbH, Emmerthal, Germany

fYear

2005

Firstpage

999

Lastpage

1002

Abstract

An empiric analytical model is presented that describes both, the diode saturation current j₀ and the dark series resistance R_s of the passivated and locally contacted rear side of solar cells. The model is experimentally verified for both, point and stripe contacts. Metallization fractions from 1.0% to 50% are realized in the experiments. The measured values of j₀ and R_s fit the theory within the error of the measurement. We use the modelled j₀ and R_s in a one-dimensional simulation of the solar cell performance, to optimize the rear contact geometry for maximum efficiency.

Keywords

dark conductivity; electrical resistivity; elemental semiconductors; passivation; point contacts; semiconductor device metallisation; silicon; solar cells; Si; dark series resistance; diode saturation current; empiric analytical model; locally contacted solar cells; metallization; passivation; point contacts; rear contact geometry; stripe contacts; Analytical models; Contact resistance; Diodes; Electrical resistance measurement; Equations; Geometry; Metallization; Passivation; Photovoltaic cells; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488301

Filename

1488301