DocumentCode :
1561219
Title :
Synchrotron-based investigations into metallic impurity distribution and defect engineering in multicrystalline silicon via thermal treatments
Author :
Buonassisi, Tonio ; Istratov, Andrei A. ; Marcus, Matthew A. ; Peters, Stefan ; Ballif, Christophe ; Heuer, Matthias ; Ciszek, Ted F. ; Cai, Zhonghou ; Lai, Bany ; Schindler, Roland ; Weber, Eicke R.
Author_Institution :
Lawrence Berkeley Nat. Lab., CA, USA
fYear :
2005
Firstpage :
1027
Lastpage :
1030
Abstract :
Synchrotron-based microprobe investigations were conducted to study the effect of heat treatments and cooling rates on the distribution and chemical state of metal-rich precipitates in multicrystalline silicon. A brief summary of these results is presented herein; complete reports will be published elsewhere. The effect of temperature on the dissolution of metal-silicide precipitates during rapid thermal processing has been investigated, revealing that higher temperatures can lead to the dissolution of metal silicide precipitates correlated with decreases in cell performance. The effect of modifying cooling rates on the distributions of metals has also been investigated, indicating that while fast cools lead to widespread nucleation, slow cools can lead to the formation of significantly larger clusters and decreased intragranular recombination activity.
Keywords :
cooling; dissolving; elemental semiconductors; impurities; rapid thermal processing; silicon; solar cells; cooling rates; defect engineering; intragranular recombination activity; metal-rich precipitates; metal-silicide precipitates; metallic impurity distribution; multicrystalline silicon; nucleation; rapid thermal processing; synchrotron-based microprobe investigations; thermal treatments; Annealing; Chemical analysis; Cooling; Impurities; Laboratories; Light sources; Materials science and technology; Silicon; Temperature distribution; Thermal engineering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488308
Filename :
1488308
Link To Document :
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