• DocumentCode
    1561281
  • Title

    Increased wafer yield in silicon ingots by the application of high purity silicon nitride-coating and high purity crucibles

  • Author

    Geyer, Bert ; Schwichtenberg, Gerd ; Muller, A.

  • Author_Institution
    Deutsche Soler AG, Freiberg, Germany
  • fYear
    2005
  • Firstpage
    1059
  • Lastpage
    1061
  • Abstract
    Multi-crystalline silicon is usually grown in fused silica crucibles, the inner walls of which are coated with silicon nitride. The influence of the purity of the silicon nitride coating and of the fused silica crucible on the minority-carrier lifetime and infrared transparency of the bricks has been monitored. The results indicate that the purer the silicon nitride the higher the minority-carrier lifetime of the crystallized ingot and the higher the yield of highly efficient solar cells per ingot. Also, the purity of the fused silica crucible seems to be affecting the minority carrier lifetime.
  • Keywords
    carrier lifetime; coatings; elemental semiconductors; infrared spectra; ingots; minority carriers; silicon; solar cells; transparency; Si; SiN; SiO2; fused silica crucibles; infrared transparency; minority-carrier lifetime; multicrystalline silicon; purity; silicon ingots; silicon nitride-coating; solar cells; wafer yield; Casting; Charge carrier lifetime; Coatings; Crystallization; Impurities; Infrared surveillance; Monitoring; Photovoltaic cells; Silicon compounds; Slurries;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488316
  • Filename
    1488316