DocumentCode
1561281
Title
Increased wafer yield in silicon ingots by the application of high purity silicon nitride-coating and high purity crucibles
Author
Geyer, Bert ; Schwichtenberg, Gerd ; Muller, A.
Author_Institution
Deutsche Soler AG, Freiberg, Germany
fYear
2005
Firstpage
1059
Lastpage
1061
Abstract
Multi-crystalline silicon is usually grown in fused silica crucibles, the inner walls of which are coated with silicon nitride. The influence of the purity of the silicon nitride coating and of the fused silica crucible on the minority-carrier lifetime and infrared transparency of the bricks has been monitored. The results indicate that the purer the silicon nitride the higher the minority-carrier lifetime of the crystallized ingot and the higher the yield of highly efficient solar cells per ingot. Also, the purity of the fused silica crucible seems to be affecting the minority carrier lifetime.
Keywords
carrier lifetime; coatings; elemental semiconductors; infrared spectra; ingots; minority carriers; silicon; solar cells; transparency; Si; SiN; SiO2; fused silica crucibles; infrared transparency; minority-carrier lifetime; multicrystalline silicon; purity; silicon ingots; silicon nitride-coating; solar cells; wafer yield; Casting; Charge carrier lifetime; Coatings; Crystallization; Impurities; Infrared surveillance; Monitoring; Photovoltaic cells; Silicon compounds; Slurries;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488316
Filename
1488316
Link To Document