DocumentCode :
1561311
Title :
Mixed-mode ESD protection circuit simulation-design methodology
Author :
Feng, H. ; Zhan, R. ; Wu, Q. ; Chen, G. ; Guan, X. ; Xie, H. ; Wang, A.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Volume :
4
fYear :
2003
Abstract :
The trial-and-error approach still dominates on-chip electrostatic discharge (ESD) protection circuit design. We present a new predictive mixed-mode ESD protection simulation-design methodology, which involves multiple-level electro-thermal-process-device-circuit-layout coupling in an ESD protection simulation that solves complex electro-thermal equations self-consistently at process, device and circuit levels, in a coupled fashion. In this way, we can investigate ESD protection circuit behavior without any pre-assumption. Practical design examples in commercial 0.35 μm CMOS are presented.
Keywords :
CMOS integrated circuits; circuit simulation; electrostatic discharge; integrated circuit design; integrated circuit layout; protection; 0.35 micron; ESD protection simulation; commercial CMOS; complex electro-thermal equations; design example; mixed-mode ESD protection circuit simulation-design methodology; multiple-level electro-thermal-process-device-circuit-layout coupling; Breakdown voltage; Circuit simulation; Circuit synthesis; Circuit testing; Computational modeling; Coupling circuits; Design methodology; Electrostatic discharge; Predictive models; Protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
Type :
conf
DOI :
10.1109/ISCAS.2003.1206179
Filename :
1206179
Link To Document :
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