Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.