DocumentCode :
1561336
Title :
Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method
Author :
Fujiwara, Kozo ; Usami, Noritaka ; Nose, Yoshitaro ; Sazaki, Gen ; Nakajima, Kazuo
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
fYear :
2005
Firstpage :
1081
Lastpage :
1083
Abstract :
We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.
Keywords :
casting; crystal growth from melt; elemental semiconductors; semiconductor growth; silicon; Si; casting method; crystal growth; directional growth processes; furnace; in-situ monitoring system; microscope; polycrystalline silicon; silicon melt; solid-liquid interface morphology; wafer surface; Cooling; Crystallization; Crystallography; Furnaces; Grain boundaries; Microscopy; Monitoring; Photovoltaic cells; Silicon; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488322
Filename :
1488322
Link To Document :
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