Performance improvement in simplified processing for screen-printed mc-Si solar cells

Author

Jeon, M.S. ; Dhamrin, M. ; Suda, M. ; Saitoh, T. ; Kamisako, K.

Author_Institution

Tokyo Univ. of Agric. & Technol., Japan

fYear

2005

Firstpage

1096

Lastpage

1099

Abstract

The effect of hydrofluoric (HF) acid treatments performed before and after contact formation on the performance of screen-printed solar cells was examined. The use of silicon-oxide-glass (SOG) for junction separation and its required chemical treatments after diffusion were investigated. The required dipping time in HF solution was less than 2 min. The best solar cells were obtained when the contacts were fired in air ambient at 750 ° for 4 min. The highest conversion efficiency in simplified solar cell is obtained after a 50-sec dip in HF after contact formation.

Keywords

diffusion; elemental semiconductors; glass; silicon; solar cells; surface treatment; 4 min; 50 sec; 750 degC; Si; contact formation; conversion efficiency; diffusion; hydrofluoric acid treatments; screen-printed mc-Si solar cells; silicon-oxide-glass; Chemicals; Electrical resistance measurement; Etching; Hafnium; Performance evaluation; Photovoltaic cells; Plasma applications; Plasma materials processing; Scanning electron microscopy; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488326

Filename

1488326