Title :
Measurement of electrical parameters of silicon up to 60GHz
Author :
Salhi, Faical ; Riedl, Wolfgang ; John, Werner ; Reichl, Herbert
Author_Institution :
FhG-IZM, Berlin
Abstract :
This paper summarises test structures for continuous determination of electrical properties of material. On the basis of on-chip technology a silicon wafers with a resistivities (rho) of 2000Ohm*cm are characterised. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to monitoring of the relative permittivity epsivr and the dissipation factor tandelta. High frequency measurements are compared to simulation results. Finally, the extracted electrical material parameters of silicon are presented and discussed
Keywords :
electrical resistivity; microwave materials; permittivity; resonators; silicon; Si; dissipation factor; electrical material parameters; electrical parameter measurement; electrical properties; high frequency measurements; material properties; on-chip technology; relative permittivity; resonator structures; silicon wafers; Conductors; Dielectric losses; Electric variables measurement; Frequency; Integral equations; Permittivity; Resonance; Silicon; Surface resistance; Testing;
Conference_Titel :
Electronic Packaging Technology Conference, 2005. EPTC 2005. Proceedings of 7th
Conference_Location :
Singapore
Print_ISBN :
0-7803-9578-6
DOI :
10.1109/EPTC.2005.1614387
