Title :
A CMOS charge pump for sub-2.0 V operation
Author :
Cheng, Kuo-Hsing ; Chang, Chung-Yu ; Wei, Chia-Hung
Author_Institution :
Dept. of Electr. Eng., Tamkang Univ., Taiwan
Abstract :
A new charge pump circuit is proposed in this paper. The major factors that will limit the charge pump gain and efficiency are threshold voltage drop and body effect. In this paper, the proposed positive charge pump circuit uses the charge transfer switches and floating well structure to eliminate the threshold voltage drop and the body effect problems. Due to the new circuit scheme, the new charge pump circuit can be used in a conventional n-well CMOS process for low supply voltage (2 V to 0.9 V) and have high charge pump gain and efficiency. The proposed circuit is based on the 0.25 μm CMOS technology, and the clock frequency is 50 MHz.
Keywords :
CMOS integrated circuits; low-power electronics; 0.25 micron; 2 to 0.9 V; 50 MHz; CMOS charge pump circuit; body effect; charge transfer switch; efficiency; floating well stucture; gain; low-voltage operation; threshold voltage; CMOS process; CMOS technology; Charge pumps; Charge transfer; Clocks; Frequency; Low voltage; Switches; Switching circuits; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1206194
