Title :
Temperature reduced direct bonding by plasma assisted wafer surface pre-treatment
Author :
Pelzer, R. ; Dragoi, V. ; Lee, D. ; Kettner, P.
Author_Institution :
EV Group, Schaerding
Abstract :
As standard wafer bonding processes require typically a high temperature annealing step, this limits the use of wafer bonding. Due to the need to expand the applications field, low temperature (<400degC) wafer bonding processes were developed. One promising technology is plasma activated wafer bonding. This process consists of a plasma treatment of the substrates surfaces prior to bonding, which results in considerably decreased process temperature. Experimental results illustrating this process´ benefits are presented
Keywords :
low-temperature techniques; plasma materials processing; rapid thermal annealing; surface treatment; thermal management (packaging); wafer bonding; high temperature annealing; low temperature wafer bonding process; plasma activated wafer bonding; plasma assisted wafer surface pretreatment; plasma treatment; temperature reduced direct bonding; Adhesives; Annealing; Chemicals; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Surface cleaning; Surface treatment; Wafer bonding;
Conference_Titel :
Electronic Packaging Technology Conference, 2005. EPTC 2005. Proceedings of 7th
Conference_Location :
Singapore
Print_ISBN :
0-7803-9578-6
DOI :
10.1109/EPTC.2005.1614397
