DocumentCode :
1561658
Title :
Towards 400 mV ALICIA thin-film silicon solar cells on glass
Author :
Straub, A. ; Inns, D. ; Kunz, O. ; Terry, M.L. ; Widenborg, P.I. ; Sproul, A.B. ; Aberle, A.G.
Author_Institution :
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
fYear :
2005
Firstpage :
1221
Lastpage :
1224
Abstract :
Polycrystalline silicon (pc-Si) is a promising candidate for thin-film photovoltaics. In this paper, the advantages, evolution of the technology, and the latest results of ALICIA pc-Si solar cells on glass are presented. ALICIA stands for aluminium-induced crystallisation ion-assisted deposition. In the ALICIA technology, a polycrystalline seed layer is formed on borosilicate glass by AIC (aluminium-induced crystallisation) and epitaxially thickened by non-ultra-high vacuum ion-assisted deposition (IAD). The key factors which led to the improvement of the open-circuit voltage from 130 mV in June 2003 to 386 mV in June 2004 are discussed. Furthermore, an ALICIA solar cell with a 1-Sun energy conversion efficiency of 2.2 % is presented. The short-circuit current density is 11.4 mA/cm2 and the Voc is 380 mV. These results were achieved by an optimisation of the temperature profile of the epitaxial growth process, by rapid thermal annealing (RTA), and by an increased hydrogenation temperature (∼480 °C). The presented results confirm that ALICIA is a very promising thin-film PV technology.
Keywords :
aluminium; crystallisation; current density; elemental semiconductors; ion beam assisted deposition; rapid thermal annealing; semiconductor growth; silicon; solar cells; thin film devices; 1-Sun energy conversion efficiency; 130 mV; 2.2 percent; 380 mV; 386 mV; 400 mV; ALICIA thin-film silicon solar cells; Si:Al; aluminium-induced crystallisation; aluminium-induced crystallisation ion-assisted deposition; borosilicate glass; epitaxial growth process; hydrogenation temperature; nonultra-high vacuum ion-assisted deposition; open-circuit voltage; polycrystalline seed layer; polycrystalline silicon; rapid thermal annealing; short-circuit current density; thin-film photovoltaics; Crystallization; Current density; Energy conversion; Glass; Photovoltaic cells; Semiconductor thin films; Silicon; Temperature; Vacuum technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488359
Filename :
1488359
Link To Document :
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