DocumentCode
1561685
Title
Novel method for the interconnection of thin-film silicon solar cells on glass
Author
Walsh, Timothy M. ; Wenham, Stuart R. ; Aberle, Armin G.
Author_Institution
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
fYear
2005
Firstpage
1229
Lastpage
1232
Abstract
Interconnection remains one of the key challenges involved in making thin-film crystalline silicon (c-Si) solar cells. Because c-Si thin-films have a much higher lateral conductance than amorphous and microcrystalline (a-Si, μc-Si) silicon films, there is no need for full-area front and rear contacts. Such full-area contacts are usually made from transparent conductive oxide (TCO) which is relatively expensive. The high lateral conductance of c-Si thin-films opens up a lot of scope for innovation and potential further cost savings from the contacting scheme. In this paper we present a novel method for the interconnection of thin-film c-Si solar cells on glass substrates. The method involves laser scribing and localized overdoping of silicon, and a self-aligning maskless photolithography process (SAMPL).
Keywords
electric admittance; elemental semiconductors; integrated circuit interconnections; laser materials processing; photolithography; semiconductor doping; silicon; solar cells; thin film devices; Si; amorphous silicon films; conductance; glass substrates; interconnection; laser scribing; localized overdoping; microcrystalline silicon films; self-aligning maskless photolithography process; thin-film crystalline silicon solar cells; transparent conductive oxide; Amorphous materials; Conductive films; Costs; Crystallization; Glass; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488361
Filename
1488361
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