• DocumentCode
    1561715
  • Title

    Laser-induced defects in crystalline silicon solar cells

  • Author

    Abbott, Malcolm ; Cousins, Peter ; Chen, Florence ; Cotter, Jeffrey

  • Author_Institution
    Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, New South Wales Univ., Sydney, NSW, Australia
  • fYear
    2005
  • Firstpage
    1241
  • Lastpage
    1244
  • Abstract
    Laser based processing has been incorporated into many successful solar cell technologies over the past 20 years; for example buried contact solar cells, laser-fired back contacts and laser texturing. However, the impact of crystal damage generated during laser processing on solar cell performance is still uncertain. This paper investigates laser-induced defects that result from a laser ablation process similar to that used to form grooves in the buried contact solar cell. The first part of this paper focuses on the formation of the defects and uses the Yang etching technique to investigate the impact of chemical etching and thermal cycles on their propagation. The second part of the paper takes a close look at the electrical properties of laser-induced defects, experimentally investigates the recombination of minority-carriers at laser-induced defects, and the potential of these defects to shunt pn-junctions.
  • Keywords
    dislocations; electron-hole recombination; elemental semiconductors; etching; laser ablation; minority carriers; silicon; solar cells; Si; Yang etching technique; buried contact solar cells; chemical etching; crystal damage; crystalline silicon solar cells; laser ablation; laser based processing; laser texturing; laser-fired back contacts; laser-induced defects; minority-carriers recombination; shunt pn-junctions; Chemical lasers; Contacts; Crystallization; Etching; Laser ablation; Optical propagation; Photovoltaic cells; Shunt (electrical); Silicon; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488364
  • Filename
    1488364