DocumentCode
1561737
Title
Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings
Author
Kessels, W.M.M. ; Van Den Oeve, P.J. ; Hoex, B. ; Bosch, R.C.M. ; van Erven, A.J.M. ; Bijker, M.D. ; van de Sanden, M.C.M.
Author_Institution
Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands
fYear
2005
Firstpage
1253
Lastpage
1256
Abstract
In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.
Keywords
antireflection coatings; carrier lifetime; elemental semiconductors; optical films; passivation; silicon; silicon compounds; solar cells; surface roughness; Si; SiNx; antireflection coatings; crystalline silicon solar cells; mass density; silicon nitride film density; surface passivation; ultrahigh-rate deposition; Coatings; Crystallization; Hydrogen; Optical films; Passivation; Photovoltaic cells; Plasma measurements; Production; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488367
Filename
1488367
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