• DocumentCode
    1561737
  • Title

    Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings

  • Author

    Kessels, W.M.M. ; Van Den Oeve, P.J. ; Hoex, B. ; Bosch, R.C.M. ; van Erven, A.J.M. ; Bijker, M.D. ; van de Sanden, M.C.M.

  • Author_Institution
    Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands
  • fYear
    2005
  • Firstpage
    1253
  • Lastpage
    1256
  • Abstract
    In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.
  • Keywords
    antireflection coatings; carrier lifetime; elemental semiconductors; optical films; passivation; silicon; silicon compounds; solar cells; surface roughness; Si; SiNx; antireflection coatings; crystalline silicon solar cells; mass density; silicon nitride film density; surface passivation; ultrahigh-rate deposition; Coatings; Crystallization; Hydrogen; Optical films; Passivation; Photovoltaic cells; Plasma measurements; Production; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488367
  • Filename
    1488367