Title :
Up-scaling and optimization of thin-film solar cells and modules based on amorphous and microcrystalline silicon
Author :
Repmann, T. ; Kilper, T. ; Appenzeller, W. ; Zahren, C. ; Stiebig, H. ; Rech, B.
Author_Institution :
Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany
Abstract :
This paper reviews the status of the process development and up-scaling of thin-film solar cells and modules based on amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon at the Institute of Photovoltaics (IPV) on substrate areas up to 30×30 cm2. Initial efficiencies of 10.6% and 10.7% were achieved for a-Si:H/μc-Si:H modules on 30×30 cm2 and 10×10 cm2 substrates, respectively. The latter ones yielded a stabilized efficiency of 10.1% which was independently confirmed by NREL. We address the process development for μc-Si:H solar cells in a high pressure regime using plasma excitation frequencies of 13.56 and 40.68 MHz. High deposition rates up to 15 Å/s could be achieved by applying high discharge powers at 40.68 MHz. We discuss technological aspects related to the up-scaling of the PECVD processes to areas of 1 m2 and above which is the topic of a recently started German R&D project of Applied Films GmbH & Co. KG (AF), Forschungsund Applikationslabor Plasmatechnik GmbH (FAP) and the IPV.
Keywords :
amorphous semiconductors; crystal microstructure; elemental semiconductors; hydrogen; plasma CVD; reviews; silicon; solar cells; thin film devices; 10.1 percent; 10.6 percent; 10.7 percent; 13.56 MHz; 40.68 MHz; PECVD; Si:H; amorphous silicon; deposition rates; discharge powers; microcrystalline silicon; plasma excitation frequencies; thin-film solar cells; Amorphous materials; Electrodes; Frequency; Glass; Photovoltaic cells; Plasma measurements; Plasma temperature; Semiconductor thin films; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488398