Title :
a-SiGe:H materials and devices deposited by hot wire CVD using a tantalum filament operated at low temperature
Author :
Mahan, A.H. ; Xu, Y. ; Gedvilas, L.M. ; Reedy, R.C. ; Williamson, D.L. ; Datta, S. ; Cohen, J.D. ; Yan, B. ; Branz, H.M.
Author_Institution :
NREL, Golden, CO, USA
Abstract :
We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small angle X-ray scattering (SAXS), photocapacitance and conductivity measurements to earlier results, and fabricate single junction n-i-p solar cell devices using these i-layers.
Keywords :
Ge-Si alloys; X-ray scattering; amorphous semiconductors; chemical vapour deposition; electrical conductivity; hydrogen; infrared spectra; photocapacitance; semiconductor junctions; semiconductor thin films; solar cells; SiGe:H; conductivity; hot wire CVD; hydrogenated amorphous silicon germanium films; infrared measurement; photocapacitance; single junction n-i-p solar cell devices; small angle X-ray scattering; tantalum filament; Amorphous silicon; Conducting materials; Conductive films; Conductivity measurement; Germanium; Photovoltaic cells; Semiconductor films; Temperature; Wire; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488401
