a-SiGe:H materials and devices deposited by hot wire CVD using a tantalum filament operated at low temperature

Author

Mahan, A.H. ; Xu, Y. ; Gedvilas, L.M. ; Reedy, R.C. ; Williamson, D.L. ; Datta, S. ; Cohen, J.D. ; Yan, B. ; Branz, H.M.

Author_Institution

NREL, Golden, CO, USA

fYear

2005

Firstpage

1397

Lastpage

1400

Abstract

We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H films by comparing infrared, small angle X-ray scattering (SAXS), photocapacitance and conductivity measurements to earlier results, and fabricate single junction n-i-p solar cell devices using these i-layers.

Keywords

Ge-Si alloys; X-ray scattering; amorphous semiconductors; chemical vapour deposition; electrical conductivity; hydrogen; infrared spectra; photocapacitance; semiconductor junctions; semiconductor thin films; solar cells; SiGe:H; conductivity; hot wire CVD; hydrogenated amorphous silicon germanium films; infrared measurement; photocapacitance; single junction n-i-p solar cell devices; small angle X-ray scattering; tantalum filament; Amorphous silicon; Conducting materials; Conductive films; Conductivity measurement; Germanium; Photovoltaic cells; Semiconductor films; Temperature; Wire; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488401

Filename

1488401