Compatibility of ISFET and CMOS technologies for smart sensors

Author

Cane, C. ; Gracia, I. ; Merlos, A. ; Lozano, M. ; Lora-Tamayo, E. ; Esteve, J.

Author_Institution

Univ. Autonoma de Barcelona, Bellaterra, Spain

fYear

1991

Firstpage

225

Lastpage

228

Abstract

Problems concerning the compatibility of ISFET (ion-sensitive field effect transistor) and MOS technologies for manufacturing chemical sensors and intelligent circuitry on the same substrate were studied. For this purpose a batch of polysilicon MOS capacitors which permits the determination of the best procedure for obtaining silicon nitride/oxide and polysilicon/oxide gates together has been processed. From the results the best option was selected and a first batch of ISFETs has been fabricated. The technology is compatible with a 5-micron CMOS process and the masks include MOS transistors and other test structures that make it possible to qualify the process as a good starting point for fabricating smart chemical sensors based on ISFET-REFET (reference FET) combinations.<>

Keywords

CMOS integrated circuits; electric sensing devices; electrochemical analysis; insulated gate field effect transistors; 5 micron; CMOS technologies; ISFET technology; ISFET-REFET; MOS transistors; Si/sub 3/N/sub 4/-SiO/sub 2/; chemical sensors; compatibility; intelligent circuitry; masks; polycrystalline Si; polysilicon MOS capacitors; reference FET; smart sensors; CMOS process; CMOS technology; Chemical sensors; Chemical technology; Circuits; FETs; Intelligent sensors; MOS capacitors; Manufacturing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148843

Filename

148843