Title :
Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability
Author :
Hernández-Mora, Madelaine ; Akuffo, Adwoa ; Hood, Colleen ; Ortiz-Rodríguez, José M. ; Hefner, Allen
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg
Abstract :
New automated measurement systems and test procedures are presented that enable the evaluation of long-term stability of SiC PiN diodes. Long-term stability results are presented for 10 kV SiC PiN diodes that are made using a new fabrication technology developed to eliminate the source of the degradation. The major objectives of the long-term stability test procedures are to monitor the forward on-state voltage degradation and current area reduction for different forward bias stress levels. Three experimental systems have been used to perform the long-term stability study. Results show that it is possible for SiC diodes to perform acceptably after over 2000 hours of forward bias stress time.
Keywords :
measurement systems; p-i-n diodes; power semiconductor diodes; silicon compounds; SiC; SiC PiN diode; automated measurement system; current area reduction; fabrication technology; forward bias degradation; forward bias stress levels; forward on-state voltage degradation; long term stability test procedures; voltage 10 kV; Automatic testing; Degradation; Diodes; Fabrication; Monitoring; Silicon carbide; Stability; Stress; System testing; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2007.4341962
