Title :
High-efficiency, 0.79 M2 tandem a-Si modules fabricated by a batch process
Author :
Pingate, Nirut ; Sriprapa, Kobsak ; Sichanugrist, Porponth ; Chetsiri, Nibondh
Author_Institution :
Nat. Sci. & Technol. Dev. Agency, Pathumthani, Thailand
Abstract :
In this work, we´ve successfully developed the high efficiency, 0.79 m2 a-Si/a-Si tandem modules with average stable power of 50 watts by a EPV´s production line at Bangkok Solar Co., Ltd. in Thailand. Films are deposited on 48 pieces of glasses at a time. This can be achieved for the first time by using 1) microcrystalline n-layer for better interface contact and lower absorption. 2) ZnO/AI back electrode deposited at room temperature. 3) High quality p/i interface layer. Furthermore, we could also successfully reduce the cell fabrication time about 40% by introducing the treatment after p-layer deposition for lower boron cross contamination at the p/i interface.
Keywords :
II-VI semiconductors; aluminium; amorphous semiconductors; batch processing (industrial); boron; crystal microstructure; elemental semiconductors; semiconductor device manufacture; semiconductor thin films; semiconductor-metal boundaries; silicon; solar cells; wide band gap semiconductors; zinc compounds; 50 W; Si:B; ZnO-Al; back electrode; boron cross contamination; cell fabrication; glasses; interface contact; microcrystalline n-layer; p-i interface layer; p-layer deposition; tandem modules; Absorption; Artificial intelligence; Boron; Contamination; Electrodes; Fabrication; Glass; Production; Temperature; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488443
