Analysis of the Body Diode Reverse Recovery of MOSFETs in ZVS PWM Combined Three-level Converter

Author

Liu, Fuxin ; Ruan, Xinbo

Author_Institution

Nanjing Univ. of Aeronaut. & Astronaut., Nanjing

fYear

2007

Firstpage

299

Lastpage

304

Abstract

Zero-voltage-switching (ZVS) PWM combined three-level (TL) converter is suitable for high input voltage with wide range applications because the switches sustain only half of the input voltage and the output Alter inductance can be reduced significantly. However, the MOSFETs in the converter suffer the body diode reverse recovery in two-level mode leading to a lower conversion efficiency. In this paper, the cause of the body diode reverse recovery has been analyzed, the effects on reverse recovery by adopting different control schemes were discussed in detail, and the theoretical analysis were verified by the experimental results from a prototype with 400 V-800 V input and 54 V/20A output.

Keywords

MOSFET circuits; PWM power convertors; switching convertors; zero voltage switching; MOSFET; ZVS PWM combined three-level converter; body diode reverse recovery; lower conversion efficiency; zero-voltage-switching; Cause effect analysis; Diodes; Inductance; MOSFETs; Prototypes; Pulse width modulation; Pulse width modulation converters; Switches; Switching converters; Zero voltage switching; combined three-level; reverse recovery; zero-voltage-switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Conference_Location

Orlando, FL

ISSN

0275-9306

Print_ISBN

978-1-4244-0654-8

Electronic_ISBN

0275-9306

Type

conf

DOI

10.1109/PESC.2007.4342004

Filename

4342004