DocumentCode
1563296
Title
Incomplete AFM interface moment flipping in AFM/FM bilayers
Author
Jian Chen ; Chunhong Hou ; Fernandez-de-Castro, J.
Author_Institution
Seagate Technol., Minneapolis, MN, USA
fYear
2002
Abstract
Summary form only given. In antiferromagnet/ferromagnet (AFM/FM) bilayer systems, the induced unidirectional anisotropy of the ferromagnetic layer comes from the net moment of the AFM at the interface. It is commonly assumed that the net AFM interface moment from all AFM grains is aligned parallel to the annealing field direction. However, our model shows that this may not be the case for PtMn/CoFe bilayers. At an annealing temperature T/sub anneal/, the AFM grains that have energy barriers larger than the threshold value of k/sub B/T/sub anneal//spl times/ln(f/sub 0//spl times/t/sub anneal/) cannot flip their interface moment to reach the global energy minimum during the annealing process and therefore still have random interface moment f/sub 0/(=10/sup 9/ Hz) is the attempt rate and t/sub anneal/ is the annealing time.
Keywords
antiferromagnetic materials; cobalt alloys; ferromagnetic materials; induced anisotropy (magnetic); interface magnetism; iron alloys; magnetic annealing; magnetic moments; manganese alloys; platinum alloys; AFM grains; AFM/FM bilayers; PtMn-CoFe; annealing field direction; global energy minimum; incomplete AFM interface moment flipping; induced unidirectional anisotropy; net AFM interface moment; random interface moment; Anisotropic magnetoresistance; Annealing; Antiferromagnetic materials; Energy barrier; Laboratories; Magnetic heads; Spin valves; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
0-7803-7365-0
Type
conf
DOI
10.1109/INTMAG.2002.1000599
Filename
1000599
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