DocumentCode
1563354
Title
High power electronic device measurements of four IGCTs (4.5 kV/4.0 kA) in series connection
Author
Yu, Qingguang ; Li, Lili ; Jiang, Qirong
Author_Institution
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Volume
5
fYear
2004
Firstpage
4446
Abstract
In this paper, high power electronics device measurements of four IGCTs (4.5 kV/4.0 kA) in series connection are put forward, which are used to investigate IGCTs in high power circuits with or without using RC-snubbers, or at least operation with small snubbers. The series connection of IGCTs is commonly applied in the high power inverter field, where expensive and space-consuming snubbers are adopted, to overcome the problems of asymmetric distribution of the blocking voltage among the IGCTs. Reasons of an asymmetric distribution of the blocking voltage during and after IGCT´s turn off process are analyzed. The first phase of the experimental results are presented and discussed.
Keywords
invertors; power integrated circuits; power semiconductor devices; semiconductor device measurement; snubbers; thyristors; RC snubbers; assymetric distribution; blocking voltage; high power circuits; high power electronic device measurements; high power inverter field; integrated gate commutated thyristor; series connection; tun off process; Anodes; Diodes; Feedback circuits; Inverters; Power electronics; Power measurement; Snubbers; Switches; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Control and Automation, 2004. WCICA 2004. Fifth World Congress on
Print_ISBN
0-7803-8273-0
Type
conf
DOI
10.1109/WCICA.2004.1342355
Filename
1342355
Link To Document