DocumentCode :
1563354
Title :
High power electronic device measurements of four IGCTs (4.5 kV/4.0 kA) in series connection
Author :
Yu, Qingguang ; Li, Lili ; Jiang, Qirong
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Volume :
5
fYear :
2004
Firstpage :
4446
Abstract :
In this paper, high power electronics device measurements of four IGCTs (4.5 kV/4.0 kA) in series connection are put forward, which are used to investigate IGCTs in high power circuits with or without using RC-snubbers, or at least operation with small snubbers. The series connection of IGCTs is commonly applied in the high power inverter field, where expensive and space-consuming snubbers are adopted, to overcome the problems of asymmetric distribution of the blocking voltage among the IGCTs. Reasons of an asymmetric distribution of the blocking voltage during and after IGCT´s turn off process are analyzed. The first phase of the experimental results are presented and discussed.
Keywords :
invertors; power integrated circuits; power semiconductor devices; semiconductor device measurement; snubbers; thyristors; RC snubbers; assymetric distribution; blocking voltage; high power circuits; high power electronic device measurements; high power inverter field; integrated gate commutated thyristor; series connection; tun off process; Anodes; Diodes; Feedback circuits; Inverters; Power electronics; Power measurement; Snubbers; Switches; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent Control and Automation, 2004. WCICA 2004. Fifth World Congress on
Print_ISBN :
0-7803-8273-0
Type :
conf
DOI :
10.1109/WCICA.2004.1342355
Filename :
1342355
Link To Document :
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