DocumentCode :
156336
Title :
2D electron gas mobility in pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructures with donor-acceptor doping
Author :
Protasov, D.Yu. ; Bakarov, A.K. ; Toropov, A.I. ; Zhuravlev, K.S.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
665
Lastpage :
666
Abstract :
It is shown, that the donor-acceptor doping of pHEMT heterostructures lead to significant suppression of an additive parasitic conductivity channel via δ-doping layer. In such heterostructures the two-dimensional electron gas mobility reached the value of 6000 cm2/(Vxs) at density exceeding 4×1012 cm-2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; two-dimensional electron gas; δ-doping layer; 2D electron gas mobility; AlGaAs-InGaAs-AlGaAs; additive parasitic conductivity channel; donor-acceptor doping; pHEMT heterostructures; pseudomorphic heterostructures; two-dimensional electron gas mobility; Doping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959577
Filename :
6959577
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=156336
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