Title :
Photoluminescence of AlGaAs/InGaAs/GaAs phemt heterostructures with donor-acceptor doping of barriers
Author :
Gulyaev, D.V. ; Zhuravlev, K.S. ; Bakarov, A.K. ; Toropov, A.I.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
We have studied the photoluminescence (PL) of AlGaAs/InGaAs/GaAs pHEMT heterostructures with donor-acceptor doping of AlGaAs barriers. We have found out that the application of additional p+doped AlGaAs layers leads to the appearance of the new bands in the PL spectra. These bands are identified as the transitions between 1) donor-acceptor pairs in the doped AlGaAs layers and 2) conduction subband - acceptor levels in the undoped InGaAs well.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; photoluminescence; semiconductor doping; AlGaAs-InGaAs-GaAs; barrier structure; donor-acceptor doping; donor-acceptor pairs; pHEMT heterostructure; photoluminescence; Gallium arsenide; PHEMTs;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959578
