DocumentCode
1563465
Title
A New Resonant Gate Driver with Two Half Bridge Structures for Both Top Switch and Bottom Switch
Author
Pan, S. ; Jain, P.K.
Author_Institution
Queen´´s Univ., Kingston
fYear
2007
Firstpage
742
Lastpage
747
Abstract
To reduce gate driving losses caused by high switching frequency operation, a new resonant gate driver for driving both top switch and bottom switch is presented in this paper. This new gate drive circuit has a simple two-half-bridge structure. A coupled inductor is used for energy circulation between gates of switches and also works as a voltage-boost transformer. It is more interesting that it also can be extended to drive two MOSFETs with common ground. Theoretical and simulation results prove operation and driving loss saving efficiency of the proposed resonant gate drive circuit.
Keywords
driver circuits; inductors; power MOSFET; power semiconductor switches; resonant power convertors; switching convertors; MOSFET; coupled inductor; gate driving losses; half bridge structures; high switching frequency operation; power converter; resonant gate driver; voltage-boost transformer; Bridge circuits; Circuit simulation; Coupling circuits; Driver circuits; Inductors; MOSFETs; RLC circuits; Resonance; Switches; Switching frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location
Orlando, FL
ISSN
0275-9306
Print_ISBN
978-1-4244-0654-8
Electronic_ISBN
0275-9306
Type
conf
DOI
10.1109/PESC.2007.4342080
Filename
4342080
Link To Document