Title :
Technology of porous silicon dioxide films synthesis and their electrical properties
Author :
Sakharov, Yu.V. ; Troyan, P.E.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR), Tomsk, Russia
Abstract :
This paper presents the synthesis technology and electrical properties of porous silicon dioxide films made by magnetron sputtering of the composite target (Si:C) in the oxygen atmosphere. Such method is fully compatible with the existing stages of integrated circuits production implemented in the majority of cases in vacuum conditions.
Keywords :
porous materials; silicon compounds; sputter deposition; thin films; SiO2; composite target; electrical properties; integrated circuit production stages; magnetron sputtering; oxygen atmosphere; porous silicon dioxide film synthesis; vacuum conditions; Dielectrics; Lead;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959583
