DocumentCode :
156357
Title :
Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon whiskers
Author :
Ermakov, A.P. ; Proskurin, D.K. ; Ermakov, S.A. ; Chernoyarov, O.V.
Author_Institution :
Voronezh State Univ. of Archit. & Civil Eng., Voronezh, Russia
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
692
Lastpage :
693
Abstract :
Experiments on local high-intensity electric current pulse effect on mechanical properties of silicon whiskers made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations. The procedure of electric current effect by single impulses on the siliconwhiskers of the having the highest specific strength from all investigated versions of shapes of a solid body is offered. The structure of crystals in an initial state and after the effect by single impulses of current of various density is investigated.
Keywords :
crystal structure; dislocations; electromechanical effects; elemental semiconductors; mechanical strength; plasticity; silicon; whiskers (crystal); Si; crystal structure; dislocation generation; electroplastic effect; initial state; initially dislocation-free silicon whiskers; local high-intensity electric current pulse effect; mechanical properties; single impulses; solid body shapes; specific strength; Annealing; Creep; Organizing; Silicon; Strain; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959588
Filename :
6959588
Link To Document :
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