DocumentCode :
1563674
Title :
Determination of the Feedback Capacity of a Low Voltage Trench Gate MOSFET from Dynamic Measurements
Author :
Höch, Vera ; Lübbers, Melanie ; Petzoldt, Jürgen ; Heeb, Michael ; Jacobs, Heiner
Author_Institution :
Tech. Univ. Ilmenau, Ilmenau
fYear :
2007
Firstpage :
870
Lastpage :
875
Abstract :
Information on transistor capacities is not only important for the calculation of switching losses and the driver design but also for estimating the transient and the EMC behavior of converters. However, data sheets supply little information on transient transistor capacities. This is why this paper presents a procedure for their determination from dynamic measurements. The plausibility of the determined characteristic is verified in a behavioral simulation model.
Keywords :
MOSFET; circuit feedback; electromagnetic compatibility; switching circuits; EMC behavior; dynamic measurements; feedback capacity; low voltage trench gate MOSFET; switching losses calculation; transistor capacities; Circuit simulation; Design engineering; Feedback; Low voltage; MOSFET circuits; Power engineering and energy; Process design; Switching converters; Switching loss; Thermal management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
ISSN :
0275-9306
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.2007.4342103
Filename :
4342103
Link To Document :
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