Title :
Lifetime Control of Power Fast Recovery Diode with Low Emitter Efficiency Anode
Author :
Hu, Dongqing ; Sin, Johnny K O ; Kang, Baowei ; Cheng, Xu ; Wu, Yu ; Xie, Shushan
Author_Institution :
Beijing Univ. of Technol., Beijing
Abstract :
Local lifetime control is obtained by means of local platinum doping using platinum gettering through the vacancy defects induced by proton irradiation. Assisted by total lifetime control using 4 MeV electron irradiation, a fast soft recovery power diode is manufactured. The reverse recovery time and softness is 110 ns and 1 respectively under test condition of 7F=25A, FB=400V, di/dt=80 A/mus, room temperature. It is equivalent to that of the international advanced diodes SML30EUZ12B. But the reverse leakage under FB=400V is only 208 nA at room temperature, only half of SML30EUZ12B´s. The performance of such diode is on top of congeneric products.
Keywords :
platinum; power semiconductor diodes; anode; local platinum doping; power fast recovery diode; proton irradiation; soft recovery power diode; Anodes; Diodes; Doping; Electrons; Gettering; Manufacturing; Platinum; Protons; Temperature; Testing;
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2007.4342124
