Title :
Dynamic Stress Effect on LDMOS RF Performances
Author :
Jiang, L. ; Yuan, J.S.
Author_Institution :
Semtech Corp., Camarillo
Abstract :
Dynamic stress effect on LDMOS RF performances have been evaluated. Measured S21 shows less degradation subject to dynamic stress than DC stress. RF power amplifier´s output power and power-added efficiency degrade after dynamic hot electron stress.
Keywords :
hot carriers; power MOSFET; power amplifiers; radiofrequency amplifiers; stress effects; LDMOS RF performance; RF power amplifier; dynamic hot electron stress; dynamic stress effect; Circuits; Degradation; Hot carriers; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Stress measurement; Vehicle dynamics; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2007.4342125
