Title :
A New Fault Detection Technique for IGBT Based on Gate Voltage Monitoring
Author :
Rodríguez, M.A. ; Claudio, A. ; Theilliol, D. ; Vela, L.G.
Author_Institution :
Centro Nacional de Investigation y Desarrollo Tecnologico, Cuernavaca
Abstract :
In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of a gate voltage signal measurement in a fault free and faulty case is presented to validate proposed technique.
Keywords :
fault diagnosis; insulated gate bipolar transistors; monitoring; IGBT; fault detection technique; gate voltage monitoring; physical model equation; signal measurement; Circuit faults; Delay effects; Equations; Failure analysis; Fault detection; Insulated gate bipolar transistors; MOSFET circuits; Monitoring; Signal analysis; Voltage measurement;
Conference_Titel :
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-0654-8
Electronic_ISBN :
0275-9306
DOI :
10.1109/PESC.2007.4342127
