DocumentCode
1563889
Title
A New Fault Detection Technique for IGBT Based on Gate Voltage Monitoring
Author
Rodríguez, M.A. ; Claudio, A. ; Theilliol, D. ; Vela, L.G.
Author_Institution
Centro Nacional de Investigation y Desarrollo Tecnologico, Cuernavaca
fYear
2007
Firstpage
1001
Lastpage
1005
Abstract
In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of a gate voltage signal measurement in a fault free and faulty case is presented to validate proposed technique.
Keywords
fault diagnosis; insulated gate bipolar transistors; monitoring; IGBT; fault detection technique; gate voltage monitoring; physical model equation; signal measurement; Circuit faults; Delay effects; Equations; Failure analysis; Fault detection; Insulated gate bipolar transistors; MOSFET circuits; Monitoring; Signal analysis; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2007. PESC 2007. IEEE
Conference_Location
Orlando, FL
ISSN
0275-9306
Print_ISBN
978-1-4244-0654-8
Electronic_ISBN
0275-9306
Type
conf
DOI
10.1109/PESC.2007.4342127
Filename
4342127
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