DocumentCode :
156393
Title :
Influence of electric field strength on electrochemical formation of macroporous silicon with ordered pore positions
Author :
Lazarouk, S.K. ; Dolbik, A.V. ; Turtsevich, A.S. ; Shvedau, S.V. ; Labunov, V.A.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
728
Lastpage :
729
Abstract :
Studying of electric field influence on macroporous silicon formation has been conducted. We have found that formation of the ordered macroporous structure took place at electric field strength exceeding 109 V/m. The electric field strength less than above-mentioned value results in pore extension and following pore splitting in two.
Keywords :
electroforming; elemental semiconductors; porous semiconductors; semiconductor growth; silicon; Si; electric field strength; electrochemical formation; macroporous silicon formation; ordered macroporous structure formation; ordered pore positions; pore extension; pore splitting; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959605
Filename :
6959605
Link To Document :
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