DocumentCode :
156399
Title :
Investigation of forming nanoclusters of germanium and silicon ??? germanium solid in LPCVD process
Author :
Kovalevsky, A.A. ; Strogova, A.S. ; Strogova, N.S. ; Borisevich, V.M.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
734
Lastpage :
735
Abstract :
The process of self-organization and evolution of the stable perfectly-ordered nanoclusters of Si, Ge and SiGe solid solution in thin-film deposition process of the germanium-alloyed silicon for the new generation electronic devices is studied.
Keywords :
electroforming; elemental semiconductors; laser deposition; nanostructured materials; plasma CVD; LPCVD process; electronic devices; germanium solid solution; nanocluster forming; silicon solid solution; silicon-germanium solid solution; stable perfectly-ordered nanocluster evolution; stable perfectly-ordered nanocluster self-organization process; thin-film deposition process; Germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959608
Filename :
6959608
Link To Document :
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