Title :
Nanostructural semiconductors based on powder technology
Author :
Mazinov, A.S. ; Shevchenko, A.I. ; Voskresensky, V.M. ; Kuropatkin, A.V.
Author_Institution :
Taurida Nat. V. I. Vernadskiy Univ., Simferopol, Ukraine
Abstract :
The basic methods to obtain nanocrystalline silicon based on powder technology are analysed. Structural features of the powder nanosilicon prepared by plasma chemical synthesis are considered. Test samples are generated by the dynamic pressure and static pressing. Current and temperature characteristics of the test samples, which showed the possibility of using monocrystallites powder material as a part of the active layers of nonlinear devices, are analysed.
Keywords :
elemental semiconductors; materials testing; nanoparticles; plasma materials processing; powder technology; powders; silicon; Si; dynamic pressure; monocrystallite powder material; nanocrystalline silicon; nanostructural semiconductor; nonlinear device; plasma chemical synthesis; powder nanosilicon preparation; powder technology; static pressing; Powders;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959611
