Title :
Characteristics and analysis of a-Si:H color-sensitive photodetectors
Author :
Jyh-Wong Hong ; Nerng-Fu Shin ; Yean-Fen Wu ; Tean-Sen Jen ; Chun-Yen Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
A novel a-Si:H photodetector has been demonstrated. The advantages of this photodetector include a voltage-adjustable sensitive-wavelength range, which has been confirmed by simulation results, and a lower sub-peak spectral response. The performances of the successfully fabricated a-Si:H color-sensitive photodetectors, processing a minimum FWHM (full width at half maximum) of 600 AA in its spectral responses and with the basic structure of Al/n/sup +/-i-p/sup +/-i-n-i-p-i-n/sup +//ITO(indium tin oxide)/glass, have been quantitatively fitted by the theoretical analysis. The simple model presented can be used to explain the color-sensitive features observed experimentally for the proposed photodetectors.<>
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; photodetectors; silicon; Si:H-ITO; Si:H-InSnO; amorphous Si:H photodetector; color-sensitive photodetectors; elemental semiconductor; minimum FWHM; model; performances; voltage-adjustable sensitive-wavelength range; Charge carrier processes; Chemicals; Cleaning; Fabrication; Glass; Indium tin oxide; Photodetectors; Plasma chemistry; Plasma devices; Voltage;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148861
