DocumentCode
156417
Title
Assessment of resistance of AlAs/GaAs nanoscale heterostructures of resonant-tunneling diodes to diffusion destruction by means of IR-spectroscopic ellipsometry
Author
Makeev, M.O. ; Ivanov, Yu.A. ; Sinyakin, V.Yu. ; Meshkov, S.A. ; Agasieva, S.V. ; Shashurin, V.D.
Author_Institution
Moscow State Tech. Univ. n.a. N.E. Bauman, Moscow, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
754
Lastpage
755
Abstract
In the course of the work the procedure of the quality assessment of AlAs/GaAs resonant-tunneling heterostructures with relation to their resistance to diffusion destruction was developed. The diffusional blurring of the AlAs/GaAs heterostructure layers was detected by the means of IR-spectroscopic ellipsometry. The coefficient of Al and Si diffusion in GaAs was also calculated.
Keywords
III-V semiconductors; aluminium compounds; chemical interdiffusion; ellipsometry; gallium arsenide; infrared spectra; resonant tunnelling diodes; Al diffusion; AlAs-GaAs; AlAs-GaAs nanoscale heterostructures; IR-spectroscopic ellipsometry; Si diffusion; diffusion destruction; diffusional blurring; quality assessment; resonant tunneling diodes; resonant tunneling heterostructures; Artificial intelligence; Gallium arsenide; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959616
Filename
6959616
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