Title :
Assessment of resistance of AlAs/GaAs nanoscale heterostructures of resonant-tunneling diodes to diffusion destruction by means of IR-spectroscopic ellipsometry
Author :
Makeev, M.O. ; Ivanov, Yu.A. ; Sinyakin, V.Yu. ; Meshkov, S.A. ; Agasieva, S.V. ; Shashurin, V.D.
Author_Institution :
Moscow State Tech. Univ. n.a. N.E. Bauman, Moscow, Russia
Abstract :
In the course of the work the procedure of the quality assessment of AlAs/GaAs resonant-tunneling heterostructures with relation to their resistance to diffusion destruction was developed. The diffusional blurring of the AlAs/GaAs heterostructure layers was detected by the means of IR-spectroscopic ellipsometry. The coefficient of Al and Si diffusion in GaAs was also calculated.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; ellipsometry; gallium arsenide; infrared spectra; resonant tunnelling diodes; Al diffusion; AlAs-GaAs; AlAs-GaAs nanoscale heterostructures; IR-spectroscopic ellipsometry; Si diffusion; diffusion destruction; diffusional blurring; quality assessment; resonant tunneling diodes; resonant tunneling heterostructures; Artificial intelligence; Gallium arsenide; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959616
