Title :
SEM-based methodology for root cause analysis of wafer edge and bevel defects
Author :
Porat, R. ; Dotan, K. ; Hemar, S. ; Levin, L. ; Li, Kaicheng ; Sung, G.
Author_Institution :
Appl. Mater. Rehovot Israel, Rehovot
Abstract :
Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.
Keywords :
failure analysis; integrated circuit yield; scanning electron microscopy; wafer-scale integration; EDX-based material analysis; SEM-based methodology; bevel defects; high-end fabs; root cause analysis; wafer edge; yield enhancement efforts; Image edge detection; Monitoring; Morphology; Optical control; Optical films; Optical microscopy; Optical polymers; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor materials;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2008.4528998
