DocumentCode
1564220
Title
SEM-based methodology for root cause analysis of wafer edge and bevel defects
Author
Porat, R. ; Dotan, K. ; Hemar, S. ; Levin, L. ; Li, Kaicheng ; Sung, G.
Author_Institution
Appl. Mater. Rehovot Israel, Rehovot
fYear
2008
Firstpage
11
Lastpage
14
Abstract
Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.
Keywords
failure analysis; integrated circuit yield; scanning electron microscopy; wafer-scale integration; EDX-based material analysis; SEM-based methodology; bevel defects; high-end fabs; root cause analysis; wafer edge; yield enhancement efforts; Image edge detection; Monitoring; Morphology; Optical control; Optical films; Optical microscopy; Optical polymers; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4528998
Filename
4528998
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