DocumentCode
1564249
Title
Challenges of High-Precision Capacitor Integration
Author
Mahalingam, Pushpa ; Cathey, Marshall ; Guiling, David ; Robbins, Britton ; Tian, Weidong ; Khan, Imran
Author_Institution
Texas Instrum., Dallas, TX
fYear
2008
Firstpage
25
Lastpage
30
Abstract
A robust, reliable method of building high-precision MIM (metal-insulator-metal) capacitors with low Vcc, high matching performance and integrated in a 0.18um mixed signal process with sub- 0.35um metallization rules has been demonstrated. Top plate and hardmask materials, along with the influence of top plate etch on defect density have been presented. An innovative method of reducing voltage coefficient for a MIM capacitor has also been reported.
Keywords
MIM devices; capacitors; etching; reliability; MIM capacitor; defect density; etch; hardmask material; high-precision capacitor integration; metallization; mixed signal process; reliable method; size 0.18 mum; size 0.35 mum; Aluminum; Atherosclerosis; CMOS process; Dielectric substrates; Dry etching; MIM capacitors; Metallization; Parasitic capacitance; Silicon; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529001
Filename
4529001
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