DocumentCode :
1564249
Title :
Challenges of High-Precision Capacitor Integration
Author :
Mahalingam, Pushpa ; Cathey, Marshall ; Guiling, David ; Robbins, Britton ; Tian, Weidong ; Khan, Imran
Author_Institution :
Texas Instrum., Dallas, TX
fYear :
2008
Firstpage :
25
Lastpage :
30
Abstract :
A robust, reliable method of building high-precision MIM (metal-insulator-metal) capacitors with low Vcc, high matching performance and integrated in a 0.18um mixed signal process with sub- 0.35um metallization rules has been demonstrated. Top plate and hardmask materials, along with the influence of top plate etch on defect density have been presented. An innovative method of reducing voltage coefficient for a MIM capacitor has also been reported.
Keywords :
MIM devices; capacitors; etching; reliability; MIM capacitor; defect density; etch; hardmask material; high-precision capacitor integration; metallization; mixed signal process; reliable method; size 0.18 mum; size 0.35 mum; Aluminum; Atherosclerosis; CMOS process; Dielectric substrates; Dry etching; MIM capacitors; Metallization; Parasitic capacitance; Silicon; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2008.4529001
Filename :
4529001
Link To Document :
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