DocumentCode
1564265
Title
Unsaturated Fluorocarbons in the Etching Process, Environmental Benefit, Technical Hurdles
Author
Tran-Quinn, Thuy ; Lakritz, Mark
Author_Institution
NXP Semicond., Hopewell Junction, NY
fYear
2008
Firstpage
37
Lastpage
42
Abstract
Environmental concerns regarding saturated hydrocarbons has resulted in unsaturated hydrocarbons in the etching process such as C4F6. Higher costs and more exacting environmental resist conditions have made this difficult. It has been noted though, in several studies, the addition of additives can make these unsaturated processes practical with more than a 70% decrease in ozone altering emissions. Additives such as CH2F2, Argon, and C6F6, the later, hexafluorobenzene with a potential 97% reduction in emissions have been promised .Experimentation with unsaturated chemicals and several additives is presented in this paper as well as an analysis of their practicality. Results are in table and graphic form and illustrate possible utilization of these techniques on a process scale.
Keywords
emission; environmental factors; etching; C4F6; C6F6; CH2F2; environmental resist condition; etching process; ozone altering emission; saturated hydrocarbon; unsaturated chemical; unsaturated fluorocarbon; Bonding; Carbon dioxide; Chemical analysis; Chemistry; Etching; Gases; Global warming; Hydrocarbons; Polymers; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
978-1-4244-1964-7
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2008.4529003
Filename
4529003
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