• DocumentCode
    1564265
  • Title

    Unsaturated Fluorocarbons in the Etching Process, Environmental Benefit, Technical Hurdles

  • Author

    Tran-Quinn, Thuy ; Lakritz, Mark

  • Author_Institution
    NXP Semicond., Hopewell Junction, NY
  • fYear
    2008
  • Firstpage
    37
  • Lastpage
    42
  • Abstract
    Environmental concerns regarding saturated hydrocarbons has resulted in unsaturated hydrocarbons in the etching process such as C4F6. Higher costs and more exacting environmental resist conditions have made this difficult. It has been noted though, in several studies, the addition of additives can make these unsaturated processes practical with more than a 70% decrease in ozone altering emissions. Additives such as CH2F2, Argon, and C6F6, the later, hexafluorobenzene with a potential 97% reduction in emissions have been promised .Experimentation with unsaturated chemicals and several additives is presented in this paper as well as an analysis of their practicality. Results are in table and graphic form and illustrate possible utilization of these techniques on a process scale.
  • Keywords
    emission; environmental factors; etching; C4F6; C6F6; CH2F2; environmental resist condition; etching process; ozone altering emission; saturated hydrocarbon; unsaturated chemical; unsaturated fluorocarbon; Bonding; Carbon dioxide; Chemical analysis; Chemistry; Etching; Gases; Global warming; Hydrocarbons; Polymers; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-1964-7
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2008.4529003
  • Filename
    4529003