The analysis of NbN and Nb-Si-N films structure nanocomposite

Author

Ivashchenko, V.I. ; Rogoz, V.M. ; Sobol, O.V. ; Dyadyura, K.O.

Author_Institution

Inst. for Problems of Mater. Sci., Kiev, Ukraine

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

775

Lastpage

776

Abstract

NbN and Nb-Si-N films are deposited by magnetron sputtering the Nb and Si targets on silicon wafers at various bias voltage, Us. The films are investigated by an atomic force microscope (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The deposited films are annealed to establish their thermal stability. The NbN films were nanostructured, and the Nb-Si-N films had a nanocomposite structure, and represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous Si₃N₄ tissue (nc-δ-NbN_x/a-Si₃N₄).

Keywords

X-ray diffraction; X-ray photoelectron spectra; aggregation; annealing; atomic force microscopy; nanocomposites; nanofabrication; nanostructured materials; niobium compounds; silicon compounds; sputter deposition; thermal stability; thin films; AFM; NbN; NbSiN; Si; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; aggregation; annealing; atomic force microscopy; bias voltage; magnetron sputtering; nanocomposite; nanostructured materials; silicon surface; thermal stability; Nanostructures;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959626

Filename

6959626