DocumentCode :
1564412
Title :
Linewidth Roughness and Cross-sectional Measurements of Sub-50 nm Structures Using CD-SAXS and CD-SEM
Author :
Wang, Chengqing ; Choi, Kwang-Woo ; Fu, Wei-En ; Jones, Ronald L. ; Ho, Derek L. ; Soles, Christopher ; Lin, Eric K. ; Wu, Wen-li ; Clarke, James S. ; Villarrubia, John S. ; Bunday, Benjamin
Author_Institution :
Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD
fYear :
2008
Firstpage :
142
Lastpage :
147
Abstract :
Critical dimension small angle X-ray scattering (CD- SAXS) is a metrology platform that is capable of measuring the average cross section and linewidth roughness (LWR) in test patterns with pitches ranging from 10 to 500 nm with sub-nm precision. These capabilities are obtained by measuring and modeling the scattering intensities of a collimated X-ray beam with sub-nm wavelength from a periodic pattern, such as those found in optical scatterometry targets. In this work, we evaluated the capability of both synchrotron-based and laboratory-scale CD-SAXS for characterizing LWR from measurements of periodic line/space patterns fabricated with extreme ultraviolet (EUV) lithography with sub-50 nm linewidths and designed with programmed roughness amplitude and frequency. For these patterns, CD-SAXS can provide high precision data on cross section dimension, including sidewall angle, line height, linewidth and pitch, as well as the amplitude of LWR. We will also discuss the status of ongoing efforts to compare quantitatively the CD- SAXS data with top-down scanning electron microscopy (CD- SEM) measurements.
Keywords :
X-ray scattering; nanolithography; nanopatterning; scanning electron microscopy; surface roughness; surface topography measurement; ultraviolet lithography; CD-SAXS; CD-SEM; critical dimension small angle X-ray scattering; cross-sectional measurement; extreme ultraviolet lithography; linewidth roughness; scanning electron microscopy; wavelength 10 nm to 500 nm; Metrology; Optical collimators; Optical scattering; Radar measurements; Scanning electron microscopy; Spaceborne radar; Testing; Ultraviolet sources; Wavelength measurement; X-ray scattering; Critical Dimension Metrology; Extreme Ultraviolet Lithography; Line Edge Roughness; Scatterometry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
Type :
conf
DOI :
10.1109/ASMC.2008.4529019
Filename :
4529019
Link To Document :
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