New Method for Monitoring Implantation by Using Particle Inspection

The paper provides a new method for monitoring implantation conditions. It offers a non-destructive and economic method to estimate implantation conditions. A group of standard wafers are prepared. At first, the photoresist layer was coated on the bare wafer, then implanted with split conditions of different parameters including of energy, dosage & tilt angle. By using particle inspection, the intensity of scattering light could be detected before and after implanting. From calculating the bias of the intensity of scattering light between before and after implanting, calibration curves were plotted with the bias of intensity versus the split conditions of the three implantation parameters. With the new method, the implantation condition can be estimated by inspecting the intensity of scattering light. As the result of experiment, the new method allows good selectivity in dosage and energy of implantation.