• DocumentCode
    1564456
  • Title

    Crystal structures and magnetic anisotropy properties of Ni-Mn-Ga martensitic phases with giant magnetic-field-induced strain

  • Author

    Sozinov, A. ; Likhachev, A.A. ; Ullakko, K.

  • Author_Institution
    Lab. of Phys. Metall. & Mater. Sci., Helsinki Univ. of Technol., Finland
  • fYear
    2002
  • Abstract
    Summary form only given. Magnetic shape memory materials are expected to have potential for a variety of actuating devices and sensors. Magnetic-field-induced rearrangement of the crystallographic domains (twin variants) can produce a large strain similar to a stress-induced one. We have found a giant magnetic field-induced strain approximately 10% at ambient temperature in a magnetic field less then 1 T in NiMnGa seven-layered martensitic phase. The strain is contributed by twin boundary motion which was confirmed by different experimental methods. From the analysis of X-ray diffraction data it was found that crystal structure of this phase is nearly orthorhombic having lattice parameters at ambient temperature a=0.619 nm, b=0.580 nm and c=0.553 nm (in cubic parent phase coordinates). The magnetic anisotropy properties of this phase were determined on the single-variant constrained samples using the magnetization curves M(H) recorded along [100], [010] and [001] directions. We demonstrate that low twinning stresses and a high level of magnetic anisotropy energy are the critical factors for the observation of a giant magnetic field induced strain.
  • Keywords
    X-ray diffraction; crystal structure; ferromagnetic materials; gallium alloys; magnetic anisotropy; magnetisation; magnetomechanical effects; manganese alloys; martensitic structure; nickel alloys; shape memory effects; twin boundaries; twinning; Ni-Mn-Ga; Ni-Mn-Ga martensitic phases; X-ray diffraction; actuating devices; crystal structure; crystallographic domains; giant magnetic-field-induced strain; lattice parameters; low twinning stresses; magnetic anisotropy; magnetic shape memory; magnetic-field-induced rearrangement; magnetization; sensors; twin boundary motion; twin variants; Crystalline materials; Magnetic anisotropy; Magnetic devices; Magnetic domains; Magnetic field induced strain; Magnetic materials; Magnetic properties; Magnetic sensors; Perpendicular magnetic anisotropy; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    0-7803-7365-0
  • Type

    conf

  • DOI
    10.1109/INTMAG.2002.1000720
  • Filename
    1000720