Structural and luminescent properties of terbium doped strontium titanate xerogel

Author

Rudenko, M.V. ; Gaponenko, N.V. ; Mydryi, A.V.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

785

Lastpage

786

Abstract

We report on synthesis and photoluminescence of sol-gel derived terbium doped strontium titanate on monocrystalline silicon and in the porous anodic alumina matrix. The microstructure and morphology of the samples are analyzed by X-ray diffraction and scanning electron microscope analyses. The thickness of the spin-on films deposited on silicon is about 115 and 170 nm due to the annealing temperature 750 and 1000 °C respectively. The samples reveal terbium luminescence in the visible range.

Keywords

X-ray diffraction; aerogels; alumina; annealing; crystal microstructure; crystal morphology; doping; elemental semiconductors; photoluminescence; scanning electron microscopy; silicon; sol-gel processing; strontium compounds; terbium; thin films; Al₂O₃; Si; SrTiO₃:Tb; X-ray diffraction; annealing temperature; luminescent properties; microstructure; monocrystalline silicon; morphology; photoluminescence; porous anodic alumina matrix; scanning electron microscope; sol-gel derived terbium doped strontium titanate; spin-on films deposition; structural properties; temperature 1000 degC; temperature 750 degC; terbium doped strontium titanate xerogel; Manganese;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959631

Filename

6959631