• DocumentCode
    1564531
  • Title

    A Yield Model Incorporating Random and Systematic Yield Part I: Theory

  • Author

    Melzner, Hanno

  • Author_Institution
    Infineon Technol. AG, Neubiberg
  • fYear
    2008
  • Firstpage
    206
  • Lastpage
    215
  • Abstract
    Since the introduction of the negative binomial yield model and critical area analysis in the 1980s, a golden methodology for modeling, prediction, and analysis of "random" or particle induced yield is in place and has been successfully applied for decades. Unfortunately, this level of maturity is not observed for modeling of "systematic" yield loss. In this paper, we will review and discuss the basics of a yield model that incorporates both "random" and "systematic" effects. Special focus will be on clarification of terms, underlying assumptions and corresponding limitations of the model. Part II of this paper is planned to be presented on a future ASMC conference. It will focus on practical application of the model in the field of lithography.
  • Keywords
    lithography; critical area analysis; lithography; negative binomial yield model; Analytical models; Implants; Lithography; Optical sensors; Predictive models; Probability; Semiconductor device manufacture; Temperature; Thermodynamics; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4244-1964-7
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2008.4529031
  • Filename
    4529031