• DocumentCode
    156455
  • Title

    Electrophysical properties of InSb quantum nanowires arrays

  • Author

    Gorokh, G.G. ; Obukhov, I.A. ; Lozovenko, A.A. ; Zakhlebaeva, A.I. ; Sochneva, E.A.

  • Author_Institution
    BSUIR, Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    791
  • Lastpage
    792
  • Abstract
    The investigations of the current-voltage characteristics (CVC) of InSb nanowire arrays with diameter of 40 nm and a high aspect ratio of length to diameter (~1000) formed in the matrix of anodic alumina (AA) is given. Presented CVC´s have a nonlinear view on their three parts with varying degrees of nonlinearity. The maximum current value in the nanowire arrays is up to 27 A/cm2 at voltage about 4.6 V.
  • Keywords
    III-V semiconductors; indium compounds; nanowires; semiconductor quantum wires; InSb; InSb quantum nanowire arrays; anodic alumina matrix; current-voltage characteristics; electrophysical properties; length-diameter aspect ratio; maximum current; nonlinearity degrees; size 40 nm;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959634
  • Filename
    6959634